Development of High Quality 8 Inch 4H-SiC Substrates

Abstract:

8 inch 4H-silicon carbide (SiC) development faces challenges first from obtaining high-quality 8 inch SiC seed substrate, then reducing grown-in crystal residual stress and defects in the following crystal growth process. Here we report the diameter expansion process from 6 inch 4H-SiC seed substrate to 8 inch 4H-SiC crystal. Based on simulation and experimental results, it is deduced that an optimized radial temperature gradient (RTG) zone in the range of 0.10-0.12 °C/mm is essential for high-quality and efficient SiC crystal diameter expansion. According to the RTG calculation, diameter expansion process is designed and 8 inch 4H-SiC crystal as well as seed substrate is achieved. With the obtained seed substrate, high-quality 8 inch 4H-SiC crystal is developed and the following polished 4H-SiC substrate quality is characterized.

• Periodical: Solid State Phenomena (Volume 344)
• Pages: 41-46
• DOI: https://doi.org/10.4028/p-x44871
• Online since: June 2023
• Authors: Xiao Li Yang, Ya Ni Pan, Chao Gao*, Qing Rui Liang, Lu Ping Wang, Jiu Yang Zhang, Yu Han Gao, Xiu Xiu Ning, Hong Yan Zhang
• Keywords: 8 Inch SiC Crystal Growth, Defect, Diameter Expansion, Stress

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