Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements

Hitesh Jayaprakash; Constantin Csato; Tobias Erlbacher; Christian Kranert; Florian Krippendorf; Paul Wimmer; Christian Reimann; Michael Rueb

doi:10.4028/p-qymc38

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HomeSolid State PhenomenaSolid State Phenomena Vol. 344Study on Estimation of Device Yield in...

Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements

Abstract:

Commercially available 4H-SiC substrate quality has improved over time, and this has extensively reduced defect concentration in the active epitaxial layer, during epi growth conditions at the interface. The objective of this work is to investigate bulk crystal quality for the purpose of future vertical power device fabrication in exfoliated, non-epitaxial, undoped material layers. Mathematical estimations on the device yield fraction, that is immune to bipolar degradation for the suggested future process were calculated based on XRT measurements to detect BPD and TSD densities on donor substrates. The full wafer BPD density maps of on-axis semi-insulating wafer substrates from two vendors were compared.

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Periodical:

Solid State Phenomena (Volume 344)

Pages:

53-57

DOI:

https://doi.org/10.4028/p-qymc38

Citation:

Cite this paper

Online since:

June 2023

Authors:

Hitesh Jayaprakash*, Constantin Csato, Tobias Erlbacher, Christian Kranert, Florian Krippendorf, Paul Wimmer, Christian Reimann, Michael Rueb

Keywords:

Basal Plane Dislocation (BPD), Bipolar Degradation, Semi Insulating, XRT, Yield

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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