Tailored Polycrystalline Substrate for SmartSiCTM Substrates Enabling High Performance Power Devices

Hugo Biard; Sidoine Odoul; Walter Schwarzenbach; Ionut Radu; Christophe Maleville; Alexandre Potier; Marc Ferrato; Eric Guajioty

doi:10.4028/p-65127n

Paper Titles

In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
p.23

Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers
p.29

3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule
p.35

Development of High Quality 8 Inch 4H-SiC Substrates
p.41

Tailored Polycrystalline Substrate for SmartSiC^TM Substrates Enabling High Performance Power Devices
p.47

Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements
p.53

PVA Nanofibers Embedded with Different Concentration of ZnO Prepared by Electrospinning Method
p.61

Dielectric Properties of Epoxy Composites Containing Silver Nanoparticle and Carbon Nanotube over the X-Band Frequency
p.67

Thermomechanical and Dielectric Properties Relationship of Hybrid Carbon Black and Nano Silica Epoxy Composites
p.75

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Tailored Polycrystalline Substrate for SmartSiC^TM Substrates Enabling High Performance Power Devices

Abstract:

Silicon Carbide (SiC) Power Devices have emerged as a breakthrough technology for a wide range of applications in the frame of high-power electronics, notably in the 600 to 3,300V. The last decades have shown a continuous and impressive improvement in both 4H-SiC wafer size and quality. Nevertheless, the availability of such wafers remains a challenge for the SiC power industry. In the last three years, Soitec has successfully adapted the Smart Cut™ technology to Silicon Carbide, resulting in the integration of a thin layer of high quality 4H-SiC on an ultra-low resistivity 3C p-SiC handle wafer. The so-called SmartSiC™ offers a drastic yield improvement for the whole industry thanks to the multiple times re-use of the 4H-SiC donor wafer, as well as an improvement of the device’s electrical performance, especially thanks to the ultra-low resistivity polycrystalline silicon carbide (p-SiC). The latter being specially developed to enhance the new SmartSiC™ substrate capabilities. In this paper, we present the work done by Mersen and Soitec to tailor the p-SiC properties, and thus the SmartSiC™ ones including such material.

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