In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules

Abstract:

The aim of this study is to show the applicability of continuous residual gas analysis for growth monitoring of undoped SiC with physical vapor transport (PVT). For this purpose, two crystals were grown, one without doping and one with continuous nitrogen doping. During the processes continuous residual gas analysis were conducted and evaluated with emphasis on the temporal variations of the nitrogen content. The charge carrier concentration of the final crystals was determined by optical methods (spectrally resolved absorption measurement with UV-VIS and Raman spectroscopy) and the results were compared with the residual gas analysis during growth. A correlation was found between the measured nitrogen-related signal and the charge carrier concentration in the samples.

• Periodical: Solid State Phenomena (Volume 344)
• Pages: 23-28
• DOI: https://doi.org/10.4028/p-568g51
• Online since: June 2023
• Authors: Jonas Ihle*, Peter J. Wellmann
• Keywords: 4H-SiC, High Resistivity SiC, PVT, Residual Gas Analysis, Unintentional Background Doping

References

[1] A. Powell, Industrial Perspectives of SiC Bulk Growth, Wide Bandgap Semiconductors for Power Electronics: Materials, Devices, Applications 1 (2021): 33-46.

DOI: 10.1002/9783527824724.ch2

[2] J. D. Blevins, Development of a world class silicon carbide substrate manufacturing capability, IEEE Transactions on Semiconductor Manufacturing 33.4 (2020): 539-545.

DOI: 10.1109/tsm.2020.3028036

[3] S. Nakajima, GaN HEMTs for 5G base station applications, 2018 IEEE International Electron Devices Meeting (IEDM). IEEE, (2018)

DOI: 10.1109/iedm.2018.8614588

[4] M. Bickermann, R. Weingärtner, and A. Winnacker, On the preparation of vanadium doped PVT grown SiC boules with high semi-insulating yield, Journal of Crystal Growth 254.3-4 (2003): 390-399.

DOI: 10.1016/s0022-0248(03)01179-5

[5] J. R. Jenny, et al., High-purity semi-insulating 4H-SiC for microwave device applications, Journal of electronic materials 32.5 (2003): 432-436.

DOI: 10.1007/s11664-003-0173-4

[6] M. Widmann, et al., Coherent control of single spins in silicon carbide at room temperature, Nature materials 14.2 (2015): 164-168.

[7] N. Son, I. Ivanov, Charge state control of the silicon vacancy and divacancy in silicon carbide, Journal of Applied Physics 129.21 (2021): 215702.

DOI: 10.1063/5.0052131

[8] J. Ihle and P. J. Wellmann, In Situ Monitoring of Unintentionally Released Nitrogen Gas in the Initial PVT Silicon Carbide Growth Process Using Mass Spectrometry, Materials Science Forum, Vol. 1062. Trans Tech Publications Ltd, 2022.

DOI: 10.4028/p-gt22u6

[9] P. J. Wellmann and R. Weingärtner, Determination of doping levels and their distribution in SiC by optical techniques, Materials Science and Engineering: B 102.1-3 (2003): 262-268.

DOI: 10.1016/s0921-5107(02)00707-9

[10] D. D. Firsov, et al., Evaluation of nitrogen incorporation into bulk 4H-SiC grown on seeds of different orientation from optical absorption spectra, Journal of Physics: Conference Series. Vol. 741. No. 1. IOP Publishing, 2016.

DOI: 10.1088/1742-6596/741/1/012043

[11] R. Weingärtner, et al., Determination of charge carrier concentration in n-and p-doped SiC based on optical absorption measurements, Applied physics letters 80.1 (2002): 70-72.

DOI: 10.1063/1.1430262

[12] J. Steiner, and P. J. Wellmann, Impact of Mechanical Stress and Nitrogen Doping on the Defect Distribution in the Initial Stage of the 4H-SiC PVT Growth Process, Materials 15.5 (2022): 1897.

DOI: 10.3390/ma15051897

[13] S. Nakashima, et al., Raman scattering study of carrier-transport and phonon properties of 4H− SiC crystals with graded doping, Physical Review B 76.24 (2007): 245208.