3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule

Bart J. Van Zeghbroeck; David C. Bobela

doi:10.4028/p-91iwmu

Paper Titles

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth
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Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
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In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
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Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers
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3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule
p.35

Development of High Quality 8 Inch 4H-SiC Substrates
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Tailored Polycrystalline Substrate for SmartSiC^TM Substrates Enabling High Performance Power Devices
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Study on Estimation of Device Yield in Non-Epitaxial 4H-SiC Material Relating to Defect Densities Influencing Bipolar Degradation with XRT- Measurements
p.53

PVA Nanofibers Embedded with Different Concentration of ZnO Prepared by Electrospinning Method
p.61

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3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule

Abstract:

3C-SiC islands were grown on atomically flat (111) 4H-SiC terraces and characterized by micro-Raman and FTIR. The islands initially have a triangular shape as defined by three {100} planes and over time evolve into hexagonal shaped islands. The triangular shape reveals the domain orientation of the island and is easily observed with an optical microscope. Examining 347 3C-SiC islands on 17 4H-SiC terraces we found that islands grown on the same terrace have the same domain orientation with 99.6% probability. The orientation of 3C-SiC islands grown on adjacent terraces was found to be close to random. This work confirms an orientation selection rule with high probability, suggesting that 3C-SiC can be grown without anti-phase domains or DPBs when grown on a single atomically flat 4H-SiC terrace, even when there are multiple nucleation sites.

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