Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Kohei Toda; Daichi Dojima; Kiyoshi Kojima; Hiroshi Mihara; Shinichi Mitani; Tadaaki Kaneko

doi:10.4028/p-z108w8

Paper Titles

Transfer of Heteroepitaxial Grown 3C-SiC Layers for Application in Optical Frequency Combs
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Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth
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Ni-Silicide Ohmic Contacts on 4H-SiC Formed by Multi Pulse Excimer Laser Annealing
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In Situ Monitoring of the Ambient Gas Phase during PVT Growth of Nominally Undoped High Resistivity SiC Boules
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Study of GHz-Burst Femtosecond Laser Micro-Punching of 4H-SiC Wafers
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3C-SiC Island Growth on 4H-Sic Terraces: Statistical Evidence for the Orientation Selection Rule
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Tailored Polycrystalline Substrate for SmartSiC^TM Substrates Enabling High Performance Power Devices
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HomeSolid State PhenomenaSolid State Phenomena Vol. 344Suppression of In-Grown SF Formation and BPD...

Suppression of In-Grown SF Formation and BPD Propagation in 4H-Sic Epitaxial Layer by Sublimating Sub-Surface Damage before the Growth

Abstract:

It is known that basal plane dislocations (BPDs) and in-grown stacking faults (IGSFs) in the 4H-SiC epitaxial layer cause severe electrical degradation in SiC devices. The impact that sub-surface damage (SSD) on a production-grade 4H-SiC substrate with CMP-finished surface causes on both the BPD propagation and IGSF formation during epitaxial growth was investigated by Dynamic AGE-ing^🄬 (DA). The substrates etched by DA sublimation etching to adjust the residual amount of SSD maintaining a smooth surface without macro step bunching were grown to observe BPD and IGSF density. The obtained results showed that these defect densities decreased exponentially with increasing etching depth. We demonstrated SSD introduced by mechanical processing led BPDs and IGSFs to extend or introduce to the epitaxial layer.

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Periodical:

Solid State Phenomena (Volume 344)

Pages:

9-14

DOI:

https://doi.org/10.4028/p-z108w8

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Cite this paper

Online since:

June 2023

Authors:

Kohei Toda*, Daichi Dojima, Kiyoshi Kojima, Hiroshi Mihara, Shinichi Mitani, Tadaaki Kaneko

Keywords:

Basal Plane Dislocation (BPD), Dynamic AGE-ing^R( Da), In-Grown Stacking Fault (IGSF), Sublimation Growth, Sub-Surface Damage (SSD), Thermal Etching

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* - Corresponding Author

References

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