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HomeSolid State PhenomenaSolid State Phenomena Vol. 345Relaxation of the Distorted Lattice of 4H-SiC...

Relaxation of the Distorted Lattice of 4H-SiC (0001) Surface by Post-Oxidation Annealing

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Abstract:

Thermal oxidation of 4H-SiC to grow native-oxide SiO₂ is always followed by the generation of crystal defects and lattice distortion. We studied the relaxation of this distorted lattice on thermally-oxidized 4H-SiC surface by performing annealing process with several conditions. The surface distortion could be relaxed partially by annealing under argon, nitrogen monoxide, and H₂O gases, confirmed by in-plane X-ray diffractometer. This surface relaxation is possibly induced by the release of oxygen-related defects, as confirmed by thermal desorption analysis. The surface distortion caused by thermal oxidation is due to the existence of oxygen in 4H-SiC lattice, while the relaxation is caused by the migration of the oxygen-related defect structure, and emitted from 4H-SiC surface region as CO molecule.

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Periodical:

Solid State Phenomena (Volume 345)

Pages:

131-136

DOI:

https://doi.org/10.4028/p-N0q5NL

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Online since:

July 2023

Authors:

Adhi Dwi Hatmanto*, Koji Kita

Keywords:

Lattice Distortion, Lattice Relaxation, Post-Oxidation Annealing, SiC, Thermal Oxidation

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© 2023 Trans Tech Publications Ltd. All Rights Reserved

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