Paper Titles
Surface Characterization - Gallium Nitride Depth Profiling with LEIS
p.83
Effect of Post-Etch Wet Cleaning on GaAs Surfaces
p.91
Pattern Collapse Simulation in CMOS Image Sensors Devices
p.99
Observation of Capillary Condensation and Pattern Bending Phenomena in Si Nanopillars Using In Situ TEM
p.105
Improvement of Fingering-Induced Pattern Collapse by Adjusting Chemical Mixing Procedure
p.111
Modeling of Capillary Pattern Collapse on Sub-5nm Pillars Using Molecular Dynamics
p.117
Insights into FinFET Structure Collapse: A Reactive Force Field-Based Molecular Dynamics Investigation
p.123
Silicon Nitride Selective Functionalization with Aqueous Cellulose
p.131
Selective Si3N4 Etching for 3D NAND Integration by Using Low Concentration of H3PO4
p.137

Improvement of Fingering-Induced Pattern Collapse by Adjusting Chemical Mixing Procedure

Article Preview

Abstract:

Pattern collapse, also as known as leaning, has become one of the most common and challengeable defects in semiconductor manufacturing process due to device shrinkage. In single wafer wet cleaning, Isopropyl Alcohol (IPA) rinse is widely used after Deionized Water (DIW) rinse. Fingering instabilities are observed at the mixing boundary of IPA and DIW, where dry spots are formed due to unbalanced capillary force amid patterns. Unlike previous DRAM devices, we have found that recent 1x-nm DRAM devices have become more vulnerable to pattern collapse induced by dry spots related to fingering instability. In this paper, we examine factors and phenomenon related to fingering-induced leaning through both experiments and simulation analysis. In addition, we also propose improved rinsing methods which could prevent fingering and related pattern collapse by adjusting nozzle configurations (i.e. speed, flow rate and etc.).

You might also be interested in these eBooks
Ultra Clean Processing of Semiconductor Surfaces XVI View Preview

Info:

Periodical:

Solid State Phenomena (Volume 346)

Pages:

111-116

DOI:

https://doi.org/10.4028/p-pT6hRe

Citation:

Cite this paper

Online since:

August 2023

Authors:

Jae Wook Choi*, Sung Joon Choi, Joong Sup Choi

Keywords:

Deionized Water (DIW), Dry Spots, Dual Nozzle, Fingering, Isopropyl Alcohol (IPA), Pattern Collapse, Thickness

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 2023 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

References

[1] Inki Kim, Capillary-force-induced collapse lithography for controlled plasmonic nanogap structure, Microsystems & Nanoengineering volume 6, Article number: 65 (2020)

DOI: 10.1038/s41378-020-0177-8

Google Scholar

[2] Seungho Kim. Formation, growth, and saturation of dry holes in thick liquid films under vapor-mediated Marangoni effect, Physics of Fluids 31, 112105 (2019)

DOI: 10.1063/1.5127284

Google Scholar

[3] Tanaka, T., Morigami, M. & Atoda, N. Mechanism of resist pattern collapse during development process. Jpn. J. Appl. Phys.32, 6059–6064 (1993).

DOI: 10.1143/jjap.32.6059

Google Scholar

[4] Duan, H., Yang, J. K. W. & Berggren, K. K. Controlled collapse of high-aspect-ratio nanostructures. Small7, 2661–2668 (2011).

DOI: 10.1002/smll.201100892

Google Scholar

[5] Duan, H. & Berggren, K. K. Directed self-assembly at the 10 nm scale by using capillary force-induced nanocohesion. Nano Lett.10, 3710–3716 (2010).

DOI: 10.1021/nl102259s

Google Scholar

[6] Irmgard Bischofberger, Fingering versus stability in the limit of zero interfacial tension, Nature Communications (2014)

DOI: 10.1038/ncomms6265

Google Scholar