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HomeSolid State PhenomenaSolid State Phenomena Vol. 346Pattern Collapse Simulation in CMOS Image Sensors...

Pattern Collapse Simulation in CMOS Image Sensors Devices

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Abstract:

Pattern collapse in CMOS image sensors is discussed, where silicon pillars are separated by trenches of few microns deep. Both analytical and numerical models are given and match experimental results. The trench profile is also taken into account to predict such collapse.

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Ultra Clean Processing of Semiconductor Surfaces XVI

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

99-104

DOI:

https://doi.org/10.4028/p-JsUk8k

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Online since:

August 2023

Authors:

Philippe Garnier*, Clement Sart, Emilie Prevost, Jerome Dubois, Benjamin Vianne

Keywords:

Capillary Forces, Deep Trenches, Features Collapse, High Aspect Ratio, Simulation, Trench Profile, Wafer Drying

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© 2023 Trans Tech Publications Ltd. All Rights Reserved

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