Surface Characterization - Gallium Nitride Depth Profiling with LEIS

Steffen Natemeyer; Petra Fischer; Roland Fischer; Markus Valtiner

doi:10.4028/p-73Qgrk

Paper Titles

Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
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Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging
p.63

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water
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Reaction Mechanism Analysis of Si Selective Etching for Gate-All-Around Transistors by Molecular Simulations
p.74

Surface Characterization - Gallium Nitride Depth Profiling with LEIS
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Effect of Post-Etch Wet Cleaning on GaAs Surfaces
p.91

Pattern Collapse Simulation in CMOS Image Sensors Devices
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Observation of Capillary Condensation and Pattern Bending Phenomena in Si Nanopillars Using In Situ TEM
p.105

Improvement of Fingering-Induced Pattern Collapse by Adjusting Chemical Mixing Procedure
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HomeSolid State PhenomenaSolid State Phenomena Vol. 346Surface Characterization - Gallium Nitride Depth...

Surface Characterization - Gallium Nitride Depth Profiling with LEIS

Abstract:

With the increasing use of III-nitride semiconductors, more knowledge is needed about the manufacturing processes and reactions with different chemicals. Gallium nitride semiconductors show a different behavior in wet chemistry compared to the known silicon technologies [4,5]. The different behavior can be explained, among other things, by the polar axis in the c-direction [0001] [6]. Surface characterization is necessary to gain a better understanding of the native surface and after different processes. We have used Low Energy Ion Scattering (LEIS) with its very high sensitivity for surface characterization to characterize the surface of different gallium nitride semiconductors and to establish a depth profile by sputtering [1,8].

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

83-90

DOI:

https://doi.org/10.4028/p-73Qgrk

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Online since:

August 2023

Authors:

Steffen Natemeyer*, Petra Fischer, Roland Fischer, Markus Valtiner

Keywords:

GaN, LEIS, Surface Chemistry

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References

[1] C. V. Cushman et al., Anal. Methods 8, 3419 (2016);

DOI: 10.1039/C6AY00765A

Google Scholar

[2] F. Huang et al., Nano Energy 96, 107098 (2022);

DOI: 10.1016/j.nanoen.2022.107098

Google Scholar

[3] Y. Ando et al., IEEE Trans. Electron Devices 60, 4125 (2013);

DOI: 10.1109/TED.2013.2284285

Google Scholar

[4] W. Bi et al., Handbook of GaN Semiconductor Materials and Devices, first ed. CRC Press, 2019;

DOI: 10.1201/9781315152011

Google Scholar

[5] M. Dalla et al, Energies 12, 2663 (2019);

DOI: 10.3390/en12142663

Google Scholar

[6] E.S. Hellman, MRS Internet Journal of Nitride Semiconductor Research 3, 11 (1998);

DOI: 10.1557/S1092578300000831

Google Scholar

[7] J. F. Watts, J. Wolstenholme, An Introduction to Surface Analysis by XPS and AES, second ed., John Wiley & Sons Ltd, Chichester, 2019;

DOI: 10.1002/0470867930

Google Scholar

[8] H. H. Brongersma et al., Journal of the European Ceramic Society 23, 2761 (2003);

DOI: 10.1016/S0955-2219(03)00287-5

Google Scholar

[9] C. V. Cushman et al., vacuum technology & coating, November 2015, pp.28-33; https://bt.e-ditionsbyfry.com/publication/?m=33412&i=279655&p=28&ver=html5

Google Scholar