Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces

Article Preview

Abstract:

Ultrahigh vacuum (UHV) environment has been widely used in surface science, but UHV technology has been often considered too complex and expensive methodology for large-scale industrial use. Because the preparation of atomically smooth and clean Si surfaces has become relevant to some industrial processes, we have re-addressed the question if UHV could be utilized in these surface tasks using industrially feasible parameters. In particular, we have studied how UHV treatments might be combined with the widely used semiconductor cleaning methodology of wet chemistry.

You might also be interested in these eBooks

Info:

Periodical:

Solid State Phenomena (Volume 346)

Pages:

57-62

Citation:

Online since:

August 2023

Export:

Price:

Permissions CCC:

Permissions PLS:

Сopyright:

© 2023 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation:

* - Corresponding Author

[1] Proceedings of the fourth international symposium on cleaning technology in semiconductor device manufacturing. Edited by R. E. Novak, J. Ruzyllo, Electrochemical Society Proceedings 95-20 (1996).

Google Scholar

[2] K. Endo, K. Arima, T. Kataoka, Y. Oshikane, H. Inoue, Y. Mori, Appl. Phys. Lett. 73 (1998) 1853.

Google Scholar

[3] T. Takahagi, S. Shingubara, H. Sakaue, 5th International Symposium on Ultra Clean Processing of Silicon Surfaces (UCPSS 2000), Sol. State Phenom. 76-77 (2001) 105.

Google Scholar

[4] H. Sakaue, S. Fujiwara, S. Shingubara, T. Takahagi, Appl. Phys. Lett. 78 (2001) 309.

Google Scholar

[5] F. De Smedt, S. De Gendt, M. Claes, M.M. Heyns, H. Vankerckhoven, C. Vinckier, Ozone Sci. Engineer. 24 (2002) 379.

DOI: 10.1080/01919510208901628

Google Scholar

[6] H. Sakaue, Y. Taniguchi, Y. Okamura, S. Shingubara T. Takahagi, Appl. Surf. Sci. 234 (2004) 439.

Google Scholar

[7] B. Onsia, M. Caymax, T. Conard, S. De Gendt, F. De Smedt, A. Delabie, C. Gottschalk, M. Green, M. Heyns, S. Lin, P. Mertens, W. Tsai, C. Vinckier, Diff. Defect Data Pt.B: Sol. State Phenom. (2005).

DOI: 10.4028/www.scientific.net/ssp.103-104.19

Google Scholar

[8] H. Kato, T. Taoka, S. Nishikata, G. Sazaki, T. Yamada, R. Czajka, A Wawro, K. Nakajima, A. Kasuya, S. Suto, Jpn. J. Appl. Phys. 46 (2007) 5701.

DOI: 10.1143/jjap.46.5701

Google Scholar

[9] C.J. Sofield, M.P. Murrell, S. Sugden, M. Heyns, S. Verhaverbeke, M.E. Welland, B. Golan, J. Barnes, MRS Proceed. 259 (1992) 105.

DOI: 10.1557/proc-259-105

Google Scholar

[10] M.E. Welland, M.P. Murrell, Scanning 15 (1993) 251.

Google Scholar

[11] M. Niwa, K. Okada, R. Sinclair, Appl. Surf. Sci. 100/101 (1996) 425.

Google Scholar

[12] Z.J. Rad, J-P. Lehtiö, I. Mack, K. Rosta, K. Chen, V. Vähänissi, M. Punkkinen, R. Punkkinen, H-P. Hedman, A. Pavlov, M. Kuzmin, H. Savin, P. Laukkanen, K. Kokko, ACS Appl. Mat. Interf. 12 (2020) 46933.

DOI: 10.1021/acsami.0c12636

Google Scholar

[13] Z.J. Rad, J.-P. Lehtiö, K. Chen, I. Mack, V. Vähänissi, M. Punkkinen, R. Punkkinen, H.-P. Hedman, M. Kuzmin, H. Savin, P. Laukkanen, K. Kokko, Vacuum 202 (2022) 111134.

DOI: 10.1016/j.vacuum.2022.111134

Google Scholar

[14] M. Miettinen, E. Vuorinen, J.-P. Lehtiö, Z.J. Rad, M. Kuzmin, R. Punkkinen, J. Järvinen, V. Vähänissi, H. Savin, P. Laukkanen, K. Kokko, Effects of different surface cleaning methods to silicon contact resistivity, submitted to Scientific Reports (2023)

DOI: 10.1016/j.vacuum.2022.111134

Google Scholar

[15] H. Savin, P. Repo, G. von Gastrow, P. Ortega, E. Calle, M. Garín, R. Alcubilla, Nat. Nanotechn. 10 (2015) 624.

DOI: 10.1038/nnano.2015.89

Google Scholar

[16] M.A. Juntunen, J. Heinonen, V. Vähänissi, P. Repo, D. Valluru, H. Savin, Nat. Photon. 10 (2016) 777.

DOI: 10.1038/nphoton.2016.226

Google Scholar

[17] S.S. Cheema, N. Shanker, L.C. Wang, C.H. Hsu, S.L. Hsu, Y.H. Liao, M. S. Jose, J. Gomez, W. Chakraborty, W. Li, J.H. Bae, S.K. Volkman, D. Kwon, Y. Rho, G. Pinelli, R. Rastogi, D. Pipitone, C. Stull, M. Cook, B. Tyrrell, V.A. Stoica, Z. Zhang, J.W. Freeland, C.J. Tassone, A. Mehta, G. Saheli, D. Thompson, D.I. Suh, W.T. Koo, K.J. Nam, D.J. Jung, W.B. Song, C.H. Lin, S. Nam, J. Heo, N. Parihar, C.P. Grigoropoulos, P. Shafer, P. Fay, R. Ramesh, S. Mahapatra, J. Ciston, S. Datta, M. Mohamed, C. Hu, S. Salahuddin, Nature 604 (2022) 6.

DOI: 10.1038/s41586-022-04425-6

Google Scholar