Highly Selective Etching of SiGe to Si for GAAFET

Seung Hyo Lee; Won Je Lee; Sang Woo Lim

doi:10.4028/p-Bv9to5

Paper Titles

On Gas-Phase Selective Dry Etching in 3D Inflections
p.14

SiGe Selective Etching to Enable Bottom and Middle Dielectric Isolations for Advanced Gate-All-Around FET Architecture
p.23

Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20
p.29

Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing
p.34

Highly Selective Etching of SiGe to Si for GAAFET
p.40

Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation
p.49

Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
p.57

Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging
p.63

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water
p.69

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Highly Selective Etching of SiGe to Si for GAAFET

Highly Selective Etching of SiGe to Si for GAAFET

Abstract:

Highly selective etching of SiGe over Si is required for the fabrication of gate-all-around field-effect transistors (GAAFET). A solution consisting of a mixture of H₂O₂, CH₃COOH, and HF is known to etch SiGe with high selectivity over Si. The detailed etching mechanism of SiGe and Si in this solution was investigated in this study. The effect of each chemical species on the etching of SiGe and Si was investigated using various concentrations of H₂O₂, CH₃COOH, and HF. It was found that the etching rate of SiGe was highly relevant to the concentration of peracetic acid (PAA) which was produced by the reaction between H₂O₂ and CH₃COOH. In addition, various additives which can further increase the SiGe selectivity and their mechanisms were investigated.

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

40-45

DOI:

https://doi.org/10.4028/p-Bv9to5

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Online since:

August 2023

Authors:

Seung Hyo Lee, Won Je Lee, Sang Woo Lim*

Keywords:

Etching Selectivity, Selective Etching, SiGe, Silicon

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