Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging

Philippe Garnier; Come de Buttet

doi:10.4028/p-ySmbh5

Paper Titles

Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing
p.34

Highly Selective Etching of SiGe to Si for GAAFET
p.40

Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation
p.49

Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
p.57

Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging
p.63

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water
p.69

Reaction Mechanism Analysis of Si Selective Etching for Gate-All-Around Transistors by Molecular Simulations
p.74

Surface Characterization - Gallium Nitride Depth Profiling with LEIS
p.83

Effect of Post-Etch Wet Cleaning on GaAs Surfaces
p.91

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Silicon and Germanium Corrosion by Fluorinated...

Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging

Abstract:

Fluorinated chemistries can lead to severe corrosion damage towards silicon and germanium based materials when wafers have a significant amount of electrostatic charges. This corrosion is evidenced on both single wafer and batch tools. It can be prevented by the presence of enough light, and wafer charging can also be eradicated by photo emission with UV light.

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

63-68

DOI:

https://doi.org/10.4028/p-ySmbh5

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Online since:

August 2023

Authors:

Philippe Garnier*, Come de Buttet

Keywords:

Corrosion, Electrostatic Charges, Germanium, HF, Light, Photo Ionization, Silicon

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* - Corresponding Author

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