Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Yoichi Tanaka; Nobuko Gan; Yuuichi Ogawa; Hideaki Iino; Ren Jie Chang; Suvidyakumar Homkar; Giuseppe Alessio Verni; Michael Givens; Ju Geng Lai; Antoine Pacco; Stephan Brus; Hiroaki Arimura; Yusuke Oniki; Efrain Altamirano-Sanchez; Frank Holsteyns; Naoto Horiguchi

doi:10.4028/p-QqI9w5

Paper Titles

Highly Selective Etching of SiGe to Si for GAAFET
p.40

Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation
p.49

Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
p.57

Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging
p.63

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water
p.69

Reaction Mechanism Analysis of Si Selective Etching for Gate-All-Around Transistors by Molecular Simulations
p.74

Surface Characterization - Gallium Nitride Depth Profiling with LEIS
p.83

Effect of Post-Etch Wet Cleaning on GaAs Surfaces
p.91

Pattern Collapse Simulation in CMOS Image Sensors Devices
p.99

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Study on Alternative Dipole Material Wet Clean by...

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water

Abstract:

This paper focuses on the mechanism and methodology of the dissolution of Alternative Dipole Material (ADM) and its inhibition through the use of functional waters. The study investigates the etching behavior of ADM in different solutions, examines the surface state of ADM before and after cleaning, and evaluates the impact of the functional water process on its electrical properties.