Effect of Post-Etch Wet Cleaning on GaAs Surfaces

Tomoki Hirano; Suguru Saito; Yoshiya Hagimoto; Hayato Iwamoto

doi:10.4028/p-xNJWl1

Paper Titles

Silicon and Germanium Corrosion by Fluorinated Chemistry in Presence of Wafer Charging
p.63

Study on Alternative Dipole Material Wet Clean by pH Controlled Functional Water
p.69

Reaction Mechanism Analysis of Si Selective Etching for Gate-All-Around Transistors by Molecular Simulations
p.74

Surface Characterization - Gallium Nitride Depth Profiling with LEIS
p.83

Effect of Post-Etch Wet Cleaning on GaAs Surfaces
p.91

Pattern Collapse Simulation in CMOS Image Sensors Devices
p.99

Observation of Capillary Condensation and Pattern Bending Phenomena in Si Nanopillars Using In Situ TEM
p.105

Improvement of Fingering-Induced Pattern Collapse by Adjusting Chemical Mixing Procedure
p.111

Modeling of Capillary Pattern Collapse on Sub-5nm Pillars Using Molecular Dynamics
p.117

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Effect of Post-Etch Wet Cleaning on GaAs Surfaces

Effect of Post-Etch Wet Cleaning on GaAs Surfaces

Abstract:

In this study, we investigated the effect of the post-etch cleaning of GaAs surfaces. We found that a plasma damage layer was formed on GaAs surfaces by dry etching, and an As-rich layer remained after post-etch cleaning. The As rich layer needs to be removed because it is replaced by micron-sized particles when stored in an air. We also found that a pure GaAs surface can be obtained by performing additional cleaning consisting of oxide formation and removal.