Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20

Francisco Javier Lopez Villanueva; Farid Sebaai; Efrain Altamirano-Sanchez; Andreas Klipp

doi:10.4028/p-Vl0z4a

Paper Titles

Past, Present, and Future of Semiconductor Cleaning Technology
p.3

Nanosheet-Based Transistor Architectures for Advanced CMOS Scaling: Wet Etch and Gas Phase Etch Challenges in Confined Spaces
p.8

On Gas-Phase Selective Dry Etching in 3D Inflections
p.14

SiGe Selective Etching to Enable Bottom and Middle Dielectric Isolations for Advanced Gate-All-Around FET Architecture
p.23

Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20
p.29

Investigation of Selective Wet Etching of SiGe Substrates for High-Performance Device Manufacturing
p.34

Highly Selective Etching of SiGe to Si for GAAFET
p.40

Atomic Level Chemical and Structural Properties of Silicon Surface and Initial Stages of Oxidation
p.49

Effects of Ultrahigh Vacuum Treatments on Wet Chemically Cleaned Si Surfaces
p.57

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Selectivity Tuning by Peroxide Concentration for...

Selectivity Tuning by Peroxide Concentration for the Selective Etching of SiGe20 to Si and SiGe40 to SiGe20

Abstract:

Using two highly efficient inhibitors, one for silicon and one for SiO₂ and SiN it is possible by varying the hydrogenperoxide concentration to achieve tuneable formulated chemistry concerning selectivity. So, the same formulation can be used for the selective etching of SiGe25 vs. Si like for GAA applications as well as for the selective etching of SiGe40 vs. SiGe20 like for CFET applications.

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

29-33

DOI:

https://doi.org/10.4028/p-Vl0z4a

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Online since:

August 2023

Authors:

Francisco Javier Lopez Villanueva*, Farid Sebaai, Efrain Altamirano-Sanchez, Andreas Klipp

Keywords:

CFET, Gate-All-Around (GAA), Nanosheet, Nanowire, Selective Etchant, SiGe

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