Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS

Koshi Suzuki; Tatsu Ichinose; Katsu Kawabata

doi:10.4028/p-3FRodT

Paper Titles

On-Line Metal Concentration Measurement at an Ultra-Trace Level in DIW by Solid Phase Extraction Method Coupled with ICP-MS
p.170

Real Time AMC Monitoring with Novel Chemical Ionization Mass Spectrometry at Single-Digit pptv Concentrations
p.176

Monitoring of Trace Molecular Impurities in Clean-Room Air
p.183

Investigation of Effects of Sulfuric Acid in Single Wafer Cleaning Process Using Isopropyl Alcohol
p.189

Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS
p.197

Chemical Identification of Sub-20 nm Defects and Sub-Monolayer Residues with Nano IR PiFM
p.204

Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS
p.210

Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO₂
p.216

Fine Edge and Bevel Film Cut Accuracy by a Novel and High Precision Wafer Centering System
p.222

HomeSolid State PhenomenaSolid State Phenomena Vol. 346Direct Analysis of Si, SiC and GaN Wafers by...

Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS

Abstract:

The new laser ablation technique has been developed for analysis of metallic impurities in SiC and GaN wafers. Particles generated by a femto-second laser ablation were aspirated by an ejector and introduced to an Inductively Coupled Plasma Mass Spectrometry (ICP-MS) via a Gas Exchange Device (GED) and analyzed. A Metal Standard Aerosol Generation (MSAG) was used for quantitation of metallic impurities in SiC and GaN wafers.

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

197-203

DOI:

https://doi.org/10.4028/p-3FRodT

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Online since:

August 2023

Authors:

Koshi Suzuki, Tatsu Ichinose, Katsu Kawabata*

Keywords:

GaN, GED, ICP-MS, Laser Ablation, Metallic Analysis, MSAG, Silicon Carbide

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* - Corresponding Author

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