Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS

Viviane Yim; Delphine Truffier-Boutry; Anna Mukhtarov; Anouk Galtayries

doi:10.4028/p-UfkQd2

Paper Titles

Monitoring of Trace Molecular Impurities in Clean-Room Air
p.183

Investigation of Effects of Sulfuric Acid in Single Wafer Cleaning Process Using Isopropyl Alcohol
p.189

Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS
p.197

Chemical Identification of Sub-20 nm Defects and Sub-Monolayer Residues with Nano IR PiFM
p.204

Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS
p.210

Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO₂
p.216

Fine Edge and Bevel Film Cut Accuracy by a Novel and High Precision Wafer Centering System
p.222

Fluid Simulation over a Rotating Disk: Momentum and Mass Transfer across the Wafer Boundary
p.231

Etch Profile Prediction Model Using Convolutional Neural Network
p.236

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Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS

Abstract:

This paper offers a preliminary study for the analysis of metallic contamination on front-end patterned wafers obtained by two different techniques based on the etching of the whole patterns, LPD-Bulk and VPD-Bulk coupled with an ICPMS. To elaborate the analysis of patterned wafers, methods were first verified and optimised on reference Si wafers. Both techniques are complementary methods for the etching of wafers. LPD-Bulk enables a fast etching of several micrometres of Si but with less precision than VPD-Bulk, which is more adapted for the etching of layers thinner than 1 micrometre. The intentional contamination in SC1 and H₂O bath of monitoring wafers showed that contamination in H₂O is better controlled due to the absence of chemical reactions, competition between oxidation and etching processes occurring during SC1. And diffusion of contaminants at the tested temperatures from 20°C to 80°C, does not occur. Heat treatment should be applied to allow the diffusion of metallic contaminants in the bulk of the wafers.