Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO2

Yasuharu Miyamoto; Yukifumi Yoshida; Toru Utsunomiya; Shogo Kunieda; Yusuke Ueda; Masakazu Sanada; Hiroyuki Sugimura

doi:10.4028/p-ra9Mqv

Paper Titles

Investigation of Effects of Sulfuric Acid in Single Wafer Cleaning Process Using Isopropyl Alcohol
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Direct Analysis of Si, SiC and GaN Wafers by LA-GED-MSAG-ICP-MS
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Chemical Identification of Sub-20 nm Defects and Sub-Monolayer Residues with Nano IR PiFM
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Development of Intentional Contamination in Iron by Bath for Silicon Wafers and Evaluation of VPD-Bulk and LPD-Bulk for Metallic Contaminants Analyses by ICPMS
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Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO₂
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Fine Edge and Bevel Film Cut Accuracy by a Novel and High Precision Wafer Centering System
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Fluid Simulation over a Rotating Disk: Momentum and Mass Transfer across the Wafer Boundary
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Etch Profile Prediction Model Using Convolutional Neural Network
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ESD Prevention Technology for Two-Fluid Pure Water Spray Cleaning with Controlled Electrostatic Charge
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Defect Mapping and Densification in Self-Assembled Monolayers of Octadecyltrichlorosilane on SiO₂

Abstract:

Self-assembled monolayers (SAMs) can be used for surface functional control to assist with pattern collapse prevention and as a protective layer to enable Area Selective Deposition (ASD). To be successful, these applications require the formation of a high-density, defect-free, so-called well-packed SAM at the nm scale. In this paper, we describe a method to map the nm scale defects of octadecyltrichlorosilane (ODTS) SAMs using a post-etching AFM analysis of the surface of the substrate and used this technique to develop a process to form high-density, defect-free SAM layer at the nm scale. This was achieved by optimizing the water concentration in the solvent for the precursor solution and annealing after SAM formation.