Eco-Friendly SPM Alternative Resist Stripping with High-Concentration O3-Water Technology

Takayuki Jizaimaru; Takao Funakoshi; Takeshi Sakai; Hisashi Fujimoto; Yasuyuki Shirai

doi:10.4028/p-jJtPk0

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HomeSolid State PhenomenaSolid State Phenomena Vol. 346Eco-Friendly SPM Alternative Resist Stripping with...

Eco-Friendly SPM Alternative Resist Stripping with High-Concentration O₃-Water Technology

Abstract:

A large amount of chemicals and ultrapure water (UPW) have been used for wet cleaning process in the semiconductor manufacturing processes. One of the most commonly used cleaning solutions is Sulfuric acid (H₂SO₄) and Hydrogen Peroxide (H₂O₂) Mixture (SPM). It is used for resist stripping, etc. on a silicon wafer. As the cleaning process increases, so does the amount of chemicals used with the recent miniaturization. As a result, wastewater will also increase, and there are concerns about the impact on the environmental aspects. The technologies to reduce H₂SO₄ [1, 2] have been developed, but its consumption still persists. Therefore, in this paper, we developed high concentrated O₃-water without using H₂SO₄, and conducted a resist stripping test verify its effectiveness as an alternative to SPM.

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Periodical:

Solid State Phenomena (Volume 346)

Pages:

302-307

DOI:

https://doi.org/10.4028/p-jJtPk0

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Online since:

August 2023

Authors:

Takayuki Jizaimaru*, Takao Funakoshi, Takeshi Sakai, Hisashi Fujimoto, Yasuyuki Shirai

Keywords:

Citric Acid, High Concentration O₃-Water, Ion Implantation, Resist Stripping, SPM

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References

[1] Hyeonjoon Han. "Ultrafine Particle Pemoval in the Wafer Cleanig Process Using an Aqueous Solution with High Concentration of Dissolved O3" Solid State Phenomena 314 (2021), p.214.

Google Scholar

[2] Fuping Chen. "High Performance, Eco-Friendly SPM Cleaning Technology using Integrated Bench-Single Wafer Cleaning System" Solid State Phenomena 314 (2021), p.133.

DOI: 10.4028/www.scientific.net/ssp.314.133

Google Scholar

[3] Mathias Guder "Photo-resist stripping with DI/O3 in semiconductor device manufacturing" Frankfurt Goethe Univ. 2009 Ph. D. thesis.

Google Scholar

[4] Don Dussault. "Megasonic Enhanced Photoresist Strip with DiO3" Solid State Phenomena 219 (2014), p.187.

DOI: 10.4028/www.scientific.net/ssp.219.187

Google Scholar

[5] John A. Roth and Daniel E. Sullivan. "Solubility of ozone in water" Ind. Eng. Chem. Fundamen. 20 (1981), p.137.

Google Scholar

[6] Toru Masaoka. "Microanalysis of H2O2 in UPW and its impact on semiconductor cleaning process" Ultrapure Micro (2016)

Google Scholar