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Paper Titles
Preface
3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
p.1
Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
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Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
p.17
Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
p.23
Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts
p.29
Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
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1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
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Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
p.51

Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics

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Abstract:

SiC metal-oxide-semiconductor field-effect transistors (MOSFETs) exhibit excellent high-speed switching characteristics. However, the sheet resistance of the p-body region and the contact resistance between the p-body region and source electrode significantly degrade the switching performance. In this study, to clarify the effect of resistance on switching speed, which has not been sufficiently explored before, we used the temperature dependence of sheet and contact resistance and conducted switching tests under different temperature conditions. Furthermore, we created a circuit model that considered body effects and compared the results of the models with the measurements. We were able to reproduce the same temperature and resistance dependences as those exhibited by the experimental results, thus confirming the effectiveness of the model.

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Info:

Periodical:

Solid State Phenomena (Volume 360)

Pages:

23-27

DOI:

https://doi.org/10.4028/p-n20uUD

Citation:

Cite this paper

Online since:

August 2024

Authors:

Yui Nagase*, Shuhei Nakata, Takaaki Tominaga

Keywords:

Body Effect, Contact Resistance, dVds/dt, p-Well Sheet Resistance, SiC-MOSFET, Switching Characteristics

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Creative Commons CC BY 4.0

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* - Corresponding Author

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