Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics

Qian Lou; Xuan Li; Zheng Yu Yang; Ling Feng Li; Song Jun Li; Xiao Chuan Deng; Bo Zhang

doi:10.4028/p-7sEC4T

Paper Titles

3^rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
p.1

Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
p.9

Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
p.17

Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
p.23

Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P⁺ Contacts
p.29

Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
p.37

1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
p.45

Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
p.51

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Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics

Abstract:

In this paper, we propose a novel 1200V SiC MOSFET featuring the embedded junction-controlled-diode (JCD-MOSFET) and demonstrate its static and dynamic characteristics through TCAD simulations. Without sacrificing blocking and conduction performance, the adoption of JCD can effectively reduce knee voltage to 1.7V based on unipolar carrier conduction mode. Due to the reduced peak reverse recovery current and reverse recovery charge, the JCD-MOSFET achieves 30.8% lower turn-on losses than conventional MOSFET. Meanwhile, the fabrication process for the JCD-MOSFET is the same as conventional MOSFET without an extra mask. This proposed JCD-MOSFET prototype shows great potential in target applications in the near future.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

17-21

DOI:

https://doi.org/10.4028/p-7sEC4T

Citation:

Cite this paper

Online since:

August 2024

Authors:

Qian Lou, Xuan Li*, Zheng Yu Yang, Ling Feng Li, Song Jun Li, Xiao Chuan Deng, Bo Zhang

Keywords:

Bipolar Degradation, Junction-Controlled-Diode, SiC-MOSFET, Third Quadrant Characteristics, Turn-On Characteristics

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Creative Commons CC BY 4.0

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* - Corresponding Author

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