1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On

Thanh Toan Pham; Jimmy Franchi; Soo Hyun Kang; Kyeong Seok Park; Doo Jin Choi; Martin Domeij

doi:10.4028/p-f0fpMb

Paper Titles

Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
p.17

Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
p.23

Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P⁺ Contacts
p.29

Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
p.37

1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
p.45

Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
p.51

Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
p.59

A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
p.67

SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
p.75

HomeSolid State PhenomenaSolid State Phenomena Vol. 3601.2 kV SiC MOSFET with Low Specific ON-Resistance...

1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On

Abstract:

With the capability to switch at high speed, there are important concerns about Parasitic Turn-On (PTO) when using SiC MOSFETs in switching applications with fundamental half-bridge configuration [1]. In this work, we present 1200V SiC planar MOSFETs with low specific ON-resistance (Rsp), fast switching characteristics and high immunity to PTO. The PTO immunity is verified by experimental comparison to several commercially available SiC MOSFETs.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

45-49

DOI:

https://doi.org/10.4028/p-f0fpMb

Citation:

Cite this paper

Online since:

August 2024

Authors:

Thanh Toan Pham*, Jimmy Franchi, Soo Hyun Kang, Kyeong Seok Park, Doo Jin Choi, Martin Domeij

Keywords:

1.2 kV SiC MOSFET, Fast Switching, Low R_DSON, Parasitic Turn-On

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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