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HomeSolid State PhenomenaSolid State Phenomena Vol. 360Non-Linear Gate Stack Effect on the Short Circuit...

Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET

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Abstract:

In this paper, the effect of a non-linear dielectric gate stack on the short-circuit performance of a 1.2 kV SiC MOSFET was analyzed through TCAD simulations. Starting from the TCAD model of a commercial 1.2 kV, its standard gate oxide was replaced with a stack formed by oxide and a non‑linear dielectric, characterized by a temperature dependent permittivity. This variation on temperature can be exploited to reduce the current conducted during short-circuit events, lowering the temperature reached through the device by about 30%, without affecting its static and dynamic performance.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

59-65

DOI:

https://doi.org/10.4028/p-50ZNaN

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Online since:

August 2024

Authors:

Marco Boccarossa*, Luca Maresca, Alessandro Borghese, Michele Riccio, Giovanni Breglio, Andrea Irace, Giovanni Antonio Salvatore

Keywords:

Ferroelectric Materials, Short‑Circuit Test, SiC MOSFETs, TCAD Simulations, Threshold Voltage

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* - Corresponding Author

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