Normally-Off 1200V Silicon Carbide JFET Diode with Low VF

Kevin Kyu Heon Cho; Chang Joon Park; Yeon Jeong Kim; Kyeong Seok Park; Fredrik Allerstam

doi:10.4028/p-7G7jdc

Paper Titles

Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
p.59

A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
p.67

SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
p.75

High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
p.81

Normally-Off 1200V Silicon Carbide JFET Diode with Low V_F
p.89

On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
p.95

Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
p.103

Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
p.111

Visualization of P⁺ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
p.119

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Normally-Off 1200V Silicon Carbide JFET Diode with Low V_F

Abstract:

Novel diode structure which looks like DMOSFETs with the gate-shorted to n⁺ source has been developed for the first time. The lateral JFET channel as a built-in channel instead of gate oxide is integrated and it is pinched-off under the zero bias condition. As JFET diode decreases the forward voltage drop using JFET channel efficiency rather than the cell pitch reduction or the increase of doping concentration in n-SiC drift region, V_F and capacitive charges which have a trade-off relationship typically could be decreased simultaneously and a better switching performance is also expected accordingly. Figure-of-Merit (=V_F×Q_C) of the proposed JFET diode has been improved by 20.2% in average compared to that of JBS diode and this FOM would be the best in class among 1200V SiC diode products.

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