Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations

Takamasa Arai; Ryo Takeda; Tom Neville; Mike Hawes

doi:10.4028/p-4yGp53

Paper Titles

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High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
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Normally-Off 1200V Silicon Carbide JFET Diode with Low V_F
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On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
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Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
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Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
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Visualization of P⁺ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
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Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
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HomeSolid State PhenomenaSolid State Phenomena Vol. 360Study of Parasitic Effects for Accurate Dynamic...

Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations

Abstract:

The high-speed switching capabilities of wide bandgap (WBG) power devices have posed challenges in accurately evaluating their dynamic characteristics, primarily due to the increasing influence of parasitic components in switching test circuits. To address this issue, we investigated the impact of parasitics by conducting dynamic tests and schematic-level transient simulation on a half-bridge switching circuit incorporating SiC MOSFETs. This comparative analysis identified specific parasitic components responsible for undesirable behaviors such as spikes and ringing in the switching waveform. Our findings provide insights into which parasitic components in the test circuit are critical for the accurate dynamic characterization of SiC MOSFETs.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

103-110

DOI:

https://doi.org/10.4028/p-4yGp53

Citation:

Cite this paper

Online since:

August 2024

Authors:

Takamasa Arai*, Ryo Takeda, Tom Neville, Mike Hawes

Keywords:

Device Modeling, Double-Pulse Testing, Dynamic Characterization, Transient Simulation

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Creative Commons CC BY 4.0

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* - Corresponding Author

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