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HomeSolid State PhenomenaSolid State Phenomena Vol. 360On the TCAD Modeling of Non-Permanent Gate Current...

On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs

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Abstract:

Under short-circuit (SC) testing SiC MOSFETs exhibit an exceptional increase of gate current (100’s mA) which is not observed in their Si counterparts. Electro-thermal TCAD simulations are capable to accurately mimic all the details of measured gate current waveforms (i_G) by capturing multiple physical mechanisms. One of these mechanisms is the thermionic or Schottky emission effect occurring at extreme temperatures (>1300K) for relatively thick gate oxides (>40nm). For the first time, it is proven that TCAD tunneling models, recommended for very thin oxides (<3nm), are suitable to reproduce the thermionic effect and predict i_G in SiC MOSFETs under SC test.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

95-101

DOI:

https://doi.org/10.4028/p-hWcw4I

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Cite this paper

Online since:

August 2024

Authors:

Jaume Roig*, Sara Kochoska, Basil Vlachakis, Jimmy Franchi, Thanh Toan Pham

Keywords:

Direct Tunneling Model, Gate Leakage, Short Circuit, Thermionic Effect

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Creative Commons CC BY 4.0

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* - Corresponding Author

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