Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device

Norman Boettcher; Mathias Rommel; Johann Tobias Erlbacher

doi:10.4028/p-EkvC4B

Paper Titles

High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
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Normally-Off 1200V Silicon Carbide JFET Diode with Low V_F
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On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
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Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
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Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
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Visualization of P⁺ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
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Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
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Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
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Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
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HomeSolid State PhenomenaSolid State Phenomena Vol. 360Analytical Modelling of the Quasi-Static Operation...

Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device

Abstract:

In this work, an analytical model describing the quasi-static operation of a monolithically integrated SiC solid-state circuit breaker (SSCB) device is rederived and refined. This SSCB is based on a 4H-SiC JFET technology offering a self-sensed blocking mechanism. The proposed model is solely based on physical parameters including the SSCB design parameters. With respect to the refinement, the proposed model is not limited to one-sided pn-junctions, considers incomplete ionization of dopants, and is able to represent breakdown characteristics. In this regard, the JFET gate breakdown characteristics are derived taking thermionic emission, space-charge-limited current and impact ionization into account. To calculate the SSCB output characteristics, a bisection-based optimization algorithm is applied carefully considering individual JFET operating states.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

111-118

DOI:

https://doi.org/10.4028/p-EkvC4B

Citation:

Cite this paper

Online since:

August 2024

Authors:

Norman Boettcher*, Mathias Rommel, Johann Tobias Erlbacher

Keywords:

4H-SiC, Analytical Model, Circuit Breaker, Gate Breakdown, JFET (Junction Field-Effect Transistor), Self-Sensed, SSCB

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Creative Commons CC BY 4.0

Citation:

* - Corresponding Author

References

[1] R. Rodrigues, et al., IEEE Transactions on Power Electronics, vol. 36, no. 1, pp.364-377, Jan. 2021.

DOI: 10.1109/TPEL.2020.3003358

Google Scholar

[2] D. He, et al., IEEE Journal of Emerging and Selected Topics in Power Electronics, vol. 7, no. 3, pp.1556-1565, Sept. 2019.

DOI: 10.1109/JESTPE.2019.2906661

Google Scholar

[3] N. Boettcher and T. Erlbacher, IEEE Electron Device Letters, vol. 42, no. 10, pp.1516-1519, Oct. 2021.

DOI: 10.1109/LED.2021.3102935

Google Scholar

[4] N. Boettcher, et al, IEEE International Symposium on Power Semiconductor Devices and ICs, Vancouver, BC, Canada, 2022, pp.261-264.

DOI: 10.1109/ISPSD49238.2022.9813628

Google Scholar

[5] N. Boettcher, et al. IEEE European Conference on Power Electronics and Applications (EPE'22 ECCE Europe), Hanover, Germany, 2022, pp. P.1-P.9.

Google Scholar

[6] N. Boettcher and T. Erlbacher, IEEE Workshop on Wide Bandgap Power Devices and Applications Asia, Suita, Japan, 2020, pp.1-6.

DOI: 10.1109/WiPDAAsia49671.2020.9360279

Google Scholar

[7] Kimoto, T. and Cooper, J.A. (2014). Fundamentals of Silicon Carbide Technology.

DOI: 10.1002/9781118313534

Google Scholar

[8] J.L. Chu, G. Persky, S.M. Sze; Journal of Applied Physics, August 1972; 43 (8): 3510–3515.

DOI: 10.1063/1.1661745

Google Scholar

[9] T. Takamori, et al., IEEE Transactions on Industry Applications, June 2023 (early access).

DOI: 10.1109/TIA.2023.3288856

Google Scholar