Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination

Abstract:

In this work, 4H-SiC p-i-n diodes with excellent single-pulse avalanche energy density (EAS) with positively beveled mesa termination have been demonstrated. The fabrication of this junction termination extension (JTE) obviates ion implantation and requires only etching process. With its uniform electric field and temperature distribution, the fabricated 4H-SiC p-i-n diodes show breakdown voltage (BV) of 886V (98.4% of the parallel-plane limit) and the inductive avalanche energy density of ~10.4J/cm²@1mH. Meanwhile, ruggedness of the avalanche breakdown has also been evidently promoted. The results confirm that this structure exhibits great capability potential in power applications.

• Periodical: Solid State Phenomena (Volume 360)
• Pages: 139-144
• DOI: https://doi.org/10.4028/p-95D96r
• Online since: August 2024
• Authors: Yan Cong Liu, Xiao Yan Tang, Yu Zhou, Hao Yuan*, Le Jia Sun, Qing Wen Song, Yu Ming Zhang
• Keywords: Avalanche Capability, Beveled Mesa Termination, Power Device, Silicon Carbide (SiC)

References

[1] H. Amano, Y. Baines, E. Beam, M. Borga, T. Bouchet, P.R. Chalker, M. Charles, K.J. Chen, N. Chowdhury, R. Chu, C. De Santi, M.M. De Souza, S. Decoutere, L. Di Cioccio, B. Eckardt, T. Egawa, P. Fay, J.J. Freedsman, L. Guido, O. Häberlen, G. Haynes, T. Heckel, D. Hemakumara, P. Houston, J. Hu, M. Hua, Q. Huang, A. Huang, S. Jiang, H. Kawai, D. Kinzer, M. Kuball, A. Kumar, K.B. Lee, X. Li, D. Marcon, M. März, R. McCarthy, G. Meneghesso, M. Meneghini, E. Morvan, A. Nakajima, E.M.S. Narayanan, S. Oliver, T. Palacios, D. Piedra, M. Plissonnier, R. Reddy, M. Sun, I. Thayne, A. Torres, N. Trivellin, V. Unni, M.J. Uren, M. Van Hove, D.J. Wallis, J. Wang, J. Xie, S. Yagi, S. Yang, C. Youtsey, R. Yu, E. Zanoni, S. Zeltner, Y. Zhang, The 2018 GaN power electronics roadmap, Journal of Physics D: Applied Physics 51(16) (2018) 163001.

DOI: 10.1088/1361-6463/aaaf9d

[2] J. Biela, M. Schweizer, S. Waffler, J.W. Kolar, SiC versus Si—Evaluation of Potentials for Performance Improvement of Inverter and DC–DC Converter Systems by SiC Power Semiconductors, IEEE Transactions on Industrial Electronics 58(7) (2011) 2872-2882.

DOI: 10.1109/tie.2010.2072896

[3] Q. Yan, X. Yuan, Y. Geng, A. Charalambous, X. Wu, Performance Evaluation of Split Output Converters with SiC MOSFETs and SiC Schottky Diodes, IEEE Transactions on Power Electronics 32(1) (2017) 406-422.

DOI: 10.1109/tpel.2016.2536643

[4] Y. Du, J. Wang, G. Wang, A.Q. Huang, Modeling of the High-Frequency Rectifier With 10-kV SiC JBS Diodes in High-Voltage Series Resonant Type DC–DC Converters, IEEE Transactions on Power Electronics 29(8) (2014) 4288-4300.

DOI: 10.1109/tpel.2013.2288642

[5] J. McBryde, A. Kadavelugu, B. Compton, S. Bhattacharya, M. Das, A. Agarwal, Performance comparison of 1200V Silicon and SiC devices for UPS application, IECON 2010 - 36th Annual Conference on IEEE Industrial Electronics Society, 2010, pp.2657-2662.

DOI: 10.1109/iecon.2010.5675125

[6] Lutz, Josef, and R. Baburske , Some aspects on ruggedness of SiC power devices, Microelectronics Reliability 54.1(2014):49-56.

DOI: 10.1016/j.microrel.2013.09.022

[7] Z. Zhu, N. Ren, H. Xu, L. Liu, Q. Guo, J. Zhang, K. Sheng, Z. Wang, Degradation of 4H-SiC MOSFET body diode under repetitive surge current stress, 2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2020, pp.182-185.

DOI: 10.1109/ispsd46842.2020.9170166

[8] X. Huang, E.V. Brunt, B.J. Baliga, A.Q. Huang, Orthogonal Positive-Bevel Termination for Chip-Size SiC Reverse Blocking Devices, IEEE Electron Device Letters 33(11) (2012) 1592-1594.

DOI: 10.1109/led.2012.2215003

[9] K.W. Nie, W.Z. Xu, F.F. Ren, D. Zhou, D.F. Pan, J.D. Ye, D.J. Chen, R. Zhang, Y.D. Zheng, H. Lu, Highly Enhanced Inductive Current Sustaining Capability and Avalanche Ruggedness in GaN p-i-n Diodes With Shallow Bevel Termination, IEEE Electron Device Letters 41(3) (2020) 469-472.

DOI: 10.1109/led.2020.2970552

[10] O. Aktas, I.C. Kizilyalli, Avalanche Capability of Vertical GaN p-n Junctions on Bulk GaN Substrates, IEEE Electron Device Letters 36(9) (2015) 890-892.

DOI: 10.1109/led.2015.2456914

[11] C. Han, Y. Zhang, Q. Song, Y. Zhang, X. Tang, F. Yang, Y. Niu, An Improved ICP Etching for Mesa-Terminated 4H-SiC p-i-n Diodes, IEEE Transactions on Electron Devices 62(4) (2015) 1223-1229.

DOI: 10.1109/ted.2015.2403615

[12] X. Deng, L. Li, J. Wu, C. Li, W. Chen, J. Li, Z. Li, B. Zhang, A Multiple-Ring-Modulated JTE Technique for 4H-SiC Power Device With Improved JTE-Dose Window, IEEE Transactions on Electron Devices 64(12) (2017) 5042-5047.

DOI: 10.1109/ted.2017.2761995

[13] L. Liu, J. Wu, N. Ren, Q. Guo, K. Sheng, 1200-V 4H-SiC Merged p-i-n Schottky Diodes With High Avalanche Capability, IEEE Transactions on Electron Devices 67(9) (2020) 3679-3684.

DOI: 10.1109/ted.2020.3007136

[14] T. Basler, R. Rupp, R. Gerlach, B. Zippelius, M. Draghici, Avalanche Robustness of SiC MPS Diodes, PCIM Europe 2016; International Exhibition and Conference for Power Electronics, Intelligent Motion, Renewable Energy and Energy Management, 2016, pp.1-8.

[15] A. Kanale, K. Han, B.J. Baliga, S. Bhattacharya, Stability of 4H-SiC JBS Diodes Under Repetitive Avalanche Stress, 2019 IEEE International Reliability Physics Symposium (IRPS), 2019, pp.1-6.

DOI: 10.1109/irps.2019.8720431