Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
p.127
p.127
Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
p.133
p.133
Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
p.139
p.139
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
p.145
p.145
Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
p.151
p.151
Comparison of Si CMOS and SiC CMOS Operational Amplifiers
p.157
p.157
Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
p.163
p.163
Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
p.169
p.169
The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
p.177
p.177
Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
Abstract:
By using 4H-SiC packaged Charge-Balanced (CB) MOSFET, we have experimentally demonstrated a 3.3kV 4H-SiC common-drain bidirectional (BD) CB power MOSFET and measured its static and dynamic characteristics compared to its unidirectional counterpart. We show that the BD CB MOSFET conducts and blocks at the first and third quadrants with the appropriate gate bias with an on-state resistance double its unidirectional counterpart, while its switching energies are 12 (19) and 34 (12) mJ/cm2 for BD CB MOSFET (UD CB MOSFET).
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Periodical:
Solid State Phenomena (Volume 360)
Pages:
151-155
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Online since:
August 2024
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