Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC

Mohamed Torky; T. Paul Chow

doi:10.4028/p-W1i4eE

Paper Titles

Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
p.139

Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
p.145

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
p.151

Comparison of Si CMOS and SiC CMOS Operational Amplifiers
p.157

Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
p.163

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
p.169

The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
p.177

Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
p.183

Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
p.189

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Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC

Abstract:

We quantitively compare the static and dynamic performance for high-voltage SiC bidirectional (BD) conventional and superjunction (SJ) DMOSFETs by using 3D TCAD simulations. We extract the specific on-resistance (R_ON,sp) and the total specific switching charge (Q_T,sp), which is a sum of the specific gate charge (Q_G,sp) and drain charge (Q_DS,sp) to quantify both the static and switching characteristics respectively. We also develop a new Figure-of-Merit (FoM), which is the product of R_ON,sp . Q_T,sp, to evaluate the overall performance. We show that the high-voltage 4H-SiC BD SJ DMOSFET has the best FoM with substantial (>58%) improvement, compared to the BD conventional DMOSFETs, which increases with increasing breakdown voltage.