Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET

Servin Rathi; David Macdonald; Aled Murphy; Martin Bell; Robert Young; David T. Clark

doi:10.4028/p-iBvg33

Paper Titles

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
p.151

Comparison of Si CMOS and SiC CMOS Operational Amplifiers
p.157

Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
p.163

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
p.169

The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
p.177

Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
p.183

Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
p.189

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
p.195

Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes
p.205

HomeSolid State PhenomenaSolid State Phenomena Vol. 360Influence of Channel Length and Gate Oxide...

Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET

Abstract:

In this work, variations in the channel length and gate oxide thickness are studied for the design optimization of 3300 V 4H-SiC based VDMOSFETs. For this, a batch of 3 wafers was processed and tested for key device characteristics. The results indicate shorter channel length of 0.5 μm leads to an increase in the drain leakage current, thus affecting the breakdown voltage as well. The thinner gate oxide at 50 nm demonstrates better control of threshold voltage with no variations in the gate leakage current distribution as compared to 65 nm.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

183-187

DOI:

https://doi.org/10.4028/p-iBvg33

Citation:

Cite this paper

Online since:

August 2024

Authors:

Servin Rathi*, David Macdonald, Aled Murphy, Martin Bell, Robert Young, David T. Clark

Keywords:

Breakdown Voltage, Channel Length, Short Channel Effects, SiC, VDMOSFET

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Creative Commons CC BY 4.0

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* - Corresponding Author

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