Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs

Jeff Kim; Brian Fetzer; Shadi Sabri; Brett Hull; Sei Hyung Ryu

doi:10.4028/p-4eG9Rl

Paper Titles

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
p.151

Comparison of Si CMOS and SiC CMOS Operational Amplifiers
p.157

Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
p.163

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
p.169

The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
p.177

Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
p.183

Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
p.189

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
p.195

Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes
p.205

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Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs

Abstract:

The short-circuit withstand time and on-resistance trade-off is investigated in 4H-SiC Power MOSFETs. We compare the static and short circuit withstand time results along with JFET width dependency and PWELL doping variation of MOSFET. We present that smaller Rds,on by wider JFET width and lighter doped PWELL results in worse short circuit withstand time.

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