Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

Koutarou Kawahara; Katsutoshi Sugawara; Akifumi Iijima; Shiro Hino; Katsuhiro Fujiyoshi; Yasunori Oritsuki; Takeshi Murakami; Tetsuo Takahashi; Yasuhiro Kagawa; Yoichi Hironaka; Kazuyasu Nishikawa

doi:10.4028/p-P4EYwp

Paper Titles

Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
p.145

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
p.151

Comparison of Si CMOS and SiC CMOS Operational Amplifiers
p.157

Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
p.163

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
p.169

The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
p.177

Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
p.183

Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
p.189

Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
p.195

HomeSolid State PhenomenaSolid State Phenomena Vol. 360Comparison of the Surge Current Capabilities of...

Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs

Abstract:

We demonstrated that the surge current capability of 3.3 kV Schottky-barrier-diode-embedded (SBD-embedded) SiC MOSFETs is equivalent to that of conventional SiC MOSFETs and three times higher than that of SiC SBDs. Furthermore, we revealed that the bipolar degradation attributed to the repetitive surge stress of high current density was negligible, which can be explained by the small total area of the expanded stacking faults (SFs) caused by the limited total period of conduction of the body diodes.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

169-175

DOI:

https://doi.org/10.4028/p-P4EYwp

Citation:

Cite this paper

Online since:

August 2024

Authors:

Koutarou Kawahara*, Katsutoshi Sugawara, Akifumi Iijima, Shiro Hino, Katsuhiro Fujiyoshi, Yasunori Oritsuki, Takeshi Murakami, Tetsuo Takahashi, Yasuhiro Kagawa, Yoichi Hironaka, Kazuyasu Nishikawa

Keywords:

BMA Cell, Repetitive Surge Stress, SBD Embedded MOSFET, SF Expansion, Surge Current

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* - Corresponding Author

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