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HomeSolid State PhenomenaSolid State Phenomena Vol. 360Frequency Investigation of SiC MOSFETs C-V Curves...

Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain

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Abstract:

SiC MOSFETs still suffers from some open issues, such as the high density of defects existing at the SiC/ SiO₂ interface. In order to characterize such interface, a non-destructive investigation technique should be employed. In this work, we investigate the measurement of Gate capacitance with biased Drain. More in detail, the effect of frequency on such curves is considered. The analysis is performed using both in experimental setup and numerical framework. Experimental and numerical results both exhibit a sharp capacitance peak in the inversion region which reduces its height as frequency increases.

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20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Solid-State Power Devices: Circuitry and Characterizations

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

145-149

DOI:

https://doi.org/10.4028/p-O37qXb

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Online since:

August 2024

Authors:

Ilaria Matacena*, Luca Maresca, Michele Riccio, Andrea Irace, Giovanni Breglio, Santolo Daliento

Keywords:

Capacitance, Frequency, Interface Traps, MOSFET, SiC

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* - Corresponding Author

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