Normally-Off 1200V Silicon Carbide JFET Diode with Low VF
p.89
p.89
On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
p.95
p.95
Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
p.103
p.103
Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
p.111
p.111
Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
p.119
p.119
Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
p.127
p.127
Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
p.133
p.133
Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
p.139
p.139
Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
p.145
p.145
Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
Abstract:
This paper presents micro-OBIC measurements performed at different biasing on two power devices protected by a combination of P+ rings embedded in a JTE Zone. Thanks to the micro-OBIC micrometer spatial resolution, small gaps can be visible on OBIC profiles. Thus, the spatial variation of the micro-OBIC signal accurately reflects the topology of the periphery protection: combination of JTE and rings and channel stopper. These measurements agree with the electric field distribution (calculated by finite element method) along the structure.
You might also be interested in these eBooks
Info:
Periodical:
Solid State Phenomena (Volume 360)
Pages:
119-125
Citation:
Online since:
August 2024
Permissions:
Share:
Citation: