Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Pierre Brosselard; Dominique Planson; Dominique Tournier; Pascal Bevilacqua; Camille Sonneville; Luong Viet Phung; Mihai Lazar; Bertrand Vergne; Sigo Scharnholz; Hervé Morel

doi:10.4028/p-sj87Lx

Paper Titles

On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
p.95

Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
p.103

Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device
p.111

Visualization of P⁺ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
p.119

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
p.127

Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
p.133

Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
p.139

Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
p.145

Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
p.151

HomeSolid State PhenomenaSolid State Phenomena Vol. 360Design and Characterization of an Optical 4H-SiC...

Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor

Abstract:

In this paper, a first demonstration of the optical triggering of a 10 kV 4H-SiC Bipolar Junction Transistor is reported. A laser emitting UV (349 nm) has been used for the generation electron-hole pairs within the device. A current density of about 20 A.cm^-2 has been obtained. This low value in comparison with 100 A.cm^-2 for “conventional” BJT is due to the narrow pulse width (5 ns). The current waveform shows the effect of the carrier lifetime in the base and collector regions. From these measurements, we have extracted the I_C (V_CE) characteristics for different laser optical power and the switch-on time which is about 1 µs.

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

127-131

DOI:

https://doi.org/10.4028/p-sj87Lx

Citation:

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Online since:

August 2024

Authors:

Pierre Brosselard*, Dominique Planson, Dominique Tournier, Pascal Bevilacqua, Camille Sonneville, Luong Viet Phung, Mihai Lazar, Bertrand Vergne, Sigo Scharnholz, Hervé Morel

Keywords:

4H-SiC, Bipolar Junction Transistor, Optical Triggering

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Creative Commons CC BY 4.0

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* - Corresponding Author

References

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