1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
p.45
p.45
Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
p.51
p.51
Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
p.59
p.59
A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
p.67
p.67
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
p.75
p.75
High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
p.81
p.81
Normally-Off 1200V Silicon Carbide JFET Diode with Low VF
p.89
p.89
On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
p.95
p.95
Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
p.103
p.103
SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
Abstract:
In this work a groundbreaking SiC power MOSFET based on innovative vertical Gate All Around (GAA) concept is presented. Extensive TCAD simulations are performed to analyze the performance in forward as well as in reverse conditions for this new device concept. The proposed design has a target rating voltage of 1200V, suitable for e-mobility applications.
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Periodical:
Solid State Phenomena (Volume 360)
Pages:
75-80
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Online since:
August 2024
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