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HomeSolid State PhenomenaSolid State Phenomena Vol. 360Analysis of Electrothermal Imbalance of...

Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography

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Abstract:

This paper provides an experimental investigation through infrared thermography of the steady-state temperature imbalance arising in parallel SiC MOSFETs. A switched-mode boost power converter based on two arrays of 4 parallel 1.2 kV MOSFETs is selected as a case-study. The analysis aims at proving that a proper device arrangement can minimize the thermal imbalance in the absence of circuit layout optimization.

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20th International Conference on Silicon Carbide and Related Materials (ICSCRM 2023)

Solid-State Power Devices: Circuitry and Characterizations

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Periodical:

Solid State Phenomena (Volume 360)

Pages:

51-57

DOI:

https://doi.org/10.4028/p-2uWGQF

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Cite this paper

Online since:

August 2024

Authors:

Alessandro Borghese*, Stefano Angora, Marco Boccarossa, Michele Riccio, Luca Maresca, Vincenzo Romano Marrazzo, Giovanni Breglio, Andrea Irace

Keywords:

Boost Converter, Electrothermal Analysis, Infrared Thermography, Parallel MOSFETs, Reliability, Temperature Imbalance

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Creative Commons CC BY 4.0

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* - Corresponding Author

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