Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices

Abstract:

Button shear tests at different temperatures between different mold compounds and Cu-leadframes have been performed to evaluate the adhesion of mold compounds to the inner surfaces of SiC-power devices. The results at different temperatures show the behavior of different material and layer stack combinations under storage at room temperatures as well as under operating conditions with elevated temperatures, where adhesion and thus the hermeticity of the device against moisture is significantly lowered. It has been shown that different thermomechanical properties of the mold compounds as well as the usage of different adhesion promoter materials have a significant effect on the adhesion properties of the mold compound to the leadframe surface of the SiC power devices, which have direct impact on the ruggedness and lifetime stability. Furthermore, these results have been correlated to thermomechanical simulations of the package architecture of SiC power devices under stress. Different wire bond architectures have been evaluated in simulations with and without die top delamination taken into account, showing that EMC delamination may play a major role in the lifetime stability of SiC power devices under thermomechanical stress like simulated in TCT- , IOL- and PTC-testing.

• Periodical: Solid State Phenomena (Volume 360)
• Pages: 37-44
• DOI: https://doi.org/10.4028/p-ccHu90
• Online since: August 2024
• Authors: Hans-Juergen Funke, Zh. Li, H. Fan, O. Dong, A J. Garete, Tom Birkoben, Christian Liguda, Soenke Habenicht*
• Keywords: Button Shear Test, Material Properties, Package Architecture, SiC Power Devices, Thermomechanical Simulations

References

[1] M. Hruska et al., Benefits of Using the New 1700V and 3300V High Power Modules for Traction Applications, PCIM'21 (2021)

[2] Ou Dong,,Zhiwen Li, Hans-Juergen Funke, Haibo Fan, Low Modulus Polyimide Coating on Wedge Bond to Improve Wire Bond Robustness in Thermal Cycling, 24th International Conference on Electronic Packaging Technology (ICEPT) , (2023)

DOI: 10.1109/icept59018.2023.10492321

[3] Li Z.W., Fan, H. B., Chen H.B. Yang J. Optimization of Epoxy Molding Compound to Enhance the Solder Joints Robustness during Thermal Cycling for A Clip Bond Power Package. International Conference on Electronic Packaging Technology (ICEPT)(2020)

DOI: 10.1109/icept50128.2020.9201939

[4] I. Kovacevic-Badstuebner, E. Mengotti, P. Natzke, S. Race, E. Bianda, J. Jormanainen, U. Grossner, "Power Cycling of Sintered SiC Power MOSFET Baseplate-less Modules with Aluminum Oxide and Silicon Nitride Substrates," 2023 35th International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hong Kong, 2023, pp.60-63

DOI: 10.1109/ispsd57135.2023.10147471

[5] Loh W.S. Gorfield M., Lu H., Hogg S., Tilford T., Johnson C.M. Wire Bond Reliability for Power Electronic Modules -Effect of Bonding. International Conference on Thermal, Mechanical and Multi-Physics Simulation Experiments in Microelectronics and Micro-Systems. EuroSime (2007)

DOI: 10.1109/esime.2007.360057

[6] R. Amro, Life-Time Estimation of Modern Power Electronics Devices, (Noor Publishing, 2017).

[7] Martineau, D. et al., Universal mechanisms of Al metallization ageing in power MOSFET", Microelectronics Reliability 54 (2014) 2432-2439.

DOI: 10.1016/j.microrel.2014.06.010

[8] Hager, C. "Lifetime estimation of aluminium wire bonds based on computational plasticity", Doctoral Thesis, ETH Zurich (2000).

[9] Randolph Flauta, Hans Juergen-Funke, Tom Birkoben, Sönke Habenicht, Christian Liguda, King Man Tai, Haibo Fan, Peilun Yao, Haibin Chen; Characteristics and Reliability of Al and Al-coated Cu Wires for High Power Applications, EPTC conference, (2023)

DOI: 10.1109/eptc59621.2023.10457723

[10] Jan Albrecht, Tobias Horn, Sönke Habenicht, Sven Rzepka, Mission Profile related Design For Reliability for Power Electronics based on Finite Element Simulation, EPTC conference (2023)

DOI: 10.1109/eptc59621.2023.10457766