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HomeSolid State PhenomenaSolid State Phenomena Vols. 37-38

Solid State Phenomena Vols. 37-38

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.37-38

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Paper Title Page

High Temperature Atomic Simulations of Grain Boundaries in Semiconductors Using a New Type of Periodic Boundary Conditions

Authors: O.B.M. Hardouin Duparc

75

Calculation of the Free Energy of Different Configurations of {001}Σ=13 Grain Boundary in Silicon by the Quasiharmonic Method

Authors: B. Lebouvier, A. Hairie, F. Hairie, Gerard Nouet, E. Paumier

85

Improved Quasiharmonic Methods for Grain Boundary Free Energy Calculations in Silicon

Authors: A. Hairie, F. Hairie, Gerard Nouet, E. Paumier, A.P. Sutton

91

Calculation of Grain Boundary Free Energy by Molecular Dynamics and Tests on Silicon Perfect Crystal

Authors: N. Ralantoson, A. Hairie, F. Hairie, O.B.M. Hardouin Duparc, M. Hou, Gerard Nouet, E. Paumier

97

Möbius Tight Binding Calculations for Grain Boundaries

Authors: O.B.M. Hardouin Duparc, M. Torrent

103

Structural and Electrical Transport Properties of Grain Boundaries in High Temperature Superconductors

Authors: R. Gross

107

The Microstructure of Sm_2-xCe_xCuO_4-δ

Authors: S. Christiansen, J. Markl, A. Bram, Horst P. Strunk, G. Saemann-Ischenko, H. Burzlaff

119

Interaction of Grain Boundaries, Dislocations and Impurity Atoms in Semiconductors

Authors: Kinichi Masuda-Jindo

125

Oxygen and Copper Precipitation in the Vicinity of the Silicon-Silicon-Dioxide Interface: Microstructure and Electrical Properties

Authors: A. Correia, D. Ballutaud, J.L. Maurice

133

Non-Ideal I-V-Characteristics of Block-Cast Silicon Solar Cells

Authors: Otwin Breitenstein, J. Heydenreich

139

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