Defects in Semiconductors: Charge States, Shallow Traps and Annealing Experiments

Abstract:

Utilizing positron annihilation spectroscopy for studying the energetics, kinetics or charge states of open volume point defects in semiconductors is seldom straight forward. Although obtaining usable experimental results with the technique is usually fairly easy, designing a suitable experiment for a specific case and/or interpreting the results in an unambiguous manner can be challenging. The goal of this lecture is to give advice and suggestions on what to consider when planning experiments with Positron Annihilation Spectroscopy (PAS) in semiconductors, through various example cases. This contribution is not meant to be scientific, rather educational.

• Periodical: Solid State Phenomena (Volume 373)
• Pages: 115-120
• DOI: https://doi.org/10.4028/p-bTLK7o
• Online since: July 2025
• Authors: Jonatan Slotte*
• Keywords: Doppler Broadening Spectroscopy, Positron Annihilation Lifetime Spectroscopy, Positron Annihilation Spectroscopy, Shallow Trap, Vacancy, Vacancy Complex

References

[1] G. Fabri, G. Poletti, and G. Randone, Phys. Rev. 151, 356 (1966).

[2] R. Fieschi, A. Gainotti, C. Ghezzi, and M. Manfredi, Phys. Rev. 175, 383 (1968).

DOI: 10.1103/physrev.175.383

[3] M. J. Puska and R. M. Nieminen, Rev. Mod. Phys. 66, 841 (1994).

[4] R. Krause-Rehberg and H. S. Leipner, Positron Annihilation in Semiconductors (Springer, Berlin, 1999).

DOI: 10.1007/978-3-662-03893-2_3

[5] F. Tuomisto and I. Makkonen, Rev. Mod. Phys. 85, 1583 (2013).

[6] J. Slotte, I. Makkonen, and F. Tuomisto, in: Characterisation and Control of Defects in Semiconductors, edited by F. Tuomisto, (IET, London, 2020), chap. 6.[7] D. V. Lang, J. Appl. Phys 45(7), 3023 (1974).

DOI: 10.1049/pbcs045e_ch6

[8] E. Schubert, Doping in III-V Semiconductors (Cambridge University Press, New York, 1993).

[9] C. D. Beling, S. Fung, H. L. Au, C. C. Ling, C. V. Reddy, A. H. Deng, and B. K. Panda, Appl. Surf. Sci. 116, 121 (1997).

[10] J. M. Mäki, F. Tuomisto, A. Varpula, D. Fisher, R. U. A. Khan, and P. M. Martineau, Phys. Rev. Lett. 107, 217403 (2011).

[11] J. Slotte, K. Saarinen, A. Salmi, R. Aavikko, S. Simula, and P. Hautojärvi, Phys. Rev. B 67, 115209 (2003).

DOI: 10.1103/physrevb.67.115209

[12] S. Valkealahti and R. M. Nieminen, Appl. Phys. A 35, 51 (1984).

[13] A. F. Makhov, Sov. Phys. Sol. State 2, 1934 (1961).

[14] A. van Veen, H. Schut, M. Clement, J. de Nijs, A. Kruseman, and M. IJpma, Appl. Surf. Sci 85, 216 (1995).

DOI: 10.1016/0169-4332(94)00334-3

[15] J. V. Olsen, P. Kirkegaard, N. J. Pedersen, and M. Eldrup, phys. stat sol. (c) 4, 4004 (2007).

[16] J. Kujala, N. Segercrantz, F. Tuomisto, and J. Slotte, J. Appl. Phys. 116, 143508 (2014).

[17] J. Gebauer, M. Lausmann, F. Redmann, R. Krause-Rehberg, H. S. Leipner, E. R. Weber, and P. Ebert, Phys. Rev. B 67, 235207 (2003).

DOI: 10.1103/physrevb.67.235207