Paper Titles

Growth and Electrical Properties of Reactively Sputtered WS_x Thin Films
p.335

Optical and Electrical Properties of Iron Disilicide with Different Degree of Structural Perfection
p.341

Composition Dependent Optical Properties of Polycrystalline CuInSe₂ Thin Films
p.347

Improvement of the Electrical Properties of WSe₂ Layers by Iodine Treatment
p.353

Electron Beam Induced Current Imaging of Silicon Oxide Damage Due to Reactive Ion Etching
p.359

Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors
p.367

Electronic Properties of Defect Levels Investigated by Photocurrent Noise in Polycrystalline Cadmium Compounds
p.373

Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films
p.379

Carrier Transport at Silicon and Germanium Grain Boundaries Enriched by Impurities
p.385

HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Electron Beam Induced Current Imaging of Silicon...

Electron Beam Induced Current Imaging of Silicon Oxide Damage Due to Reactive Ion Etching

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors IV

Info:

Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

359-366

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.359

Citation:

Cite this paper

Online since:

May 1996

Authors:

Hary Kirk, Zbigniew J. Radzimski, A. Romanowski, George A. Rozgonyi

Keywords:

Defect, EBIC, Interface, MOS, Reactive Ion Etching, TCM, True Oxide-EBIC

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: