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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Monte Carlo Simulation of Charge Carriers'...

Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

367-372

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.367

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Online since:

May 1996

Authors:

A. Mandowski, J. Swiatek

Keywords:

Monte-Carlo Method (MC-Method), Recombination, Thermally Stimulated Conductivity, Thermoluminescence (TL), Trapping

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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