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Electron Beam Induced Current Imaging of Silicon Oxide Damage Due to Reactive Ion Etching
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Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors
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Electronic Properties of Defect Levels Investigated by Photocurrent Noise in Polycrystalline Cadmium Compounds
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Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films
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Carrier Transport at Silicon and Germanium Grain Boundaries Enriched by Impurities
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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Electronic Properties of Defect Levels...

Electronic Properties of Defect Levels Investigated by Photocurrent Noise in Polycrystalline Cadmium Compounds

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

373-378

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.373

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Online since:

May 1996

Authors:

Anna Carbone, P. Mazzetti

Keywords:

Cadmium Compounds, Current Noise Spectroscopy, Deep Energy Levels

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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