Paper Titles

Monte Carlo Simulation of Charge Carriers' Trapping in Polycrystalline Semiconductors
p.367

Electronic Properties of Defect Levels Investigated by Photocurrent Noise in Polycrystalline Cadmium Compounds
p.373

Experimental Determination of Hall Factor for Hydrogenated In-Situ Phosphorus Doped Polysilicon Films
p.379

Carrier Transport at Silicon and Germanium Grain Boundaries Enriched by Impurities
p.385

1/f Noise Transformation that Accompanies the Trimming of Polycrystalline Silicon Layers
p.391

Investigation of the Low-Frequency Electrical Noise in Grain Boundaries and Polycrystalline Silicon Films
p.397

Selective Photoconductivity in n-Type CdMnTe:Ga
p.403

Semiconducting Gas Sensors: Basic Science and Empirical Approaches
p.409

Influence of the Technological Parameters on the Mechanical Properties of Thick Epipolysilicon Layers for Micromechanical Sensors
p.423

HomeSolid State PhenomenaSolid State Phenomena Vols. 51-521/f Noise Transformation that Accompanies the...

1/f Noise Transformation that Accompanies the Trimming of Polycrystalline Silicon Layers

Article Preview

Abstract:

You might also be interested in these eBooks

Polycrystalline Semiconductors IV

Info:

Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

391-396

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.391

Citation:

Cite this paper

Online since:

May 1996

Authors:

N.N. Tkachenko

Keywords:

1/f Noise, Resistance Across Grain Boundary, Thin Film Resistor

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1996 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: