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HomeSolid State PhenomenaSolid State Phenomena Vols. 51-52Carrier Transport at Silicon and Germanium Grain...

Carrier Transport at Silicon and Germanium Grain Boundaries Enriched by Impurities

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Abstract:

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Polycrystalline Semiconductors IV

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Periodical:

Solid State Phenomena (Volumes 51-52)

Pages:

385-390

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.51-52.385

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Online since:

May 1996

Authors:

A.K. Fedotov, Yu. Ilyashuk, S. Shumski

Keywords:

Carrier Transport, Grain Boundary, Impurity Segregation, Polycrystals, Semiconductor

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© 1996 Trans Tech Publications Ltd. All Rights Reserved

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