Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films

Abstract:

Article Preview

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Edited by:

M. Kittler

Pages:

13-20

DOI:

10.4028/www.scientific.net/SSP.6-7.13

Citation:

R. J. Falster "Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films", Solid State Phenomena, Vols. 6-7, pp. 13-20, 1989

Online since:

January 1989

Export:

Price:

$35.00

In order to see related information, you need to Login.