Paper Titles

Gettering in Silicon by Oxygen Related Defects, Stacking Faults and Thin Polycrystalline Films
p.13

Advances in the Understanding of Oxygen and Carbon in Silicon
p.21

Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon
p.33

Effect of Volume Defects on Gold Gettering in CZ-SI
p.41

Investigations of the Behaviour of Transition Metals in Silicon
p.49

Defect Engineering for Bicmos-Technology
p.57

Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
p.65

Implantation Induced Defect Modification in P Doped Bipolar Structures
p.73

The Properties of the Defects in Heavy Implanted Silicon
p.79

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Investigations of the Behaviour of Transition...

Investigations of the Behaviour of Transition Metals in Silicon

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Gettering and Defect Engineering in Semiconductor Technology III

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Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

49-56

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.49

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Online since:

January 1989

Authors:

W. Nitzsche, O. Brodersen, S. Hopfe, Manfred Reiche, I. Burck

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© 1989 Trans Tech Publications Ltd. All Rights Reserved

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