Paper Titles

Advances in the Understanding of Oxygen and Carbon in Silicon
p.21

Investigations of the Structure, Formation, and Annihilation of Thermally Induced Donors in Silicon
p.33

Effect of Volume Defects on Gold Gettering in CZ-SI
p.41

Investigations of the Behaviour of Transition Metals in Silicon
p.49

Defect Engineering for Bicmos-Technology
p.57

Investigation of Gettering Phenomena in Semiconductors by Simultaneous Charge Collection Microscopy and Cathodoluminescence
p.65

Implantation Induced Defect Modification in P Doped Bipolar Structures
p.73

The Properties of the Defects in Heavy Implanted Silicon
p.79

Defect Formation and Lateral Oxidation during Locos Processing
p.93

HomeSolid State PhenomenaSolid State Phenomena Vols. 6-7Defect Engineering for Bicmos-Technology

Defect Engineering for Bicmos-Technology

Article Preview

Abstract:

You might also be interested in these eBooks

Gettering and Defect Engineering in Semiconductor Technology III

Info:

Periodical:

Solid State Phenomena (Volumes 6-7)

Pages:

57-64

DOI:

https://doi.org/10.4028/www.scientific.net/SSP.6-7.57

Citation:

Cite this paper

Online since:

January 1989

Authors:

G. Ritter, K.-E. Ehwald, P. Schley

Export:

RIS, BibTeX

Price:

Permissions CCC:

Request Permissions

Permissions PLS:

Request Permissions

Сopyright:

© 1989 Trans Tech Publications Ltd. All Rights Reserved

Share:

Citation: